Open AccessСтруктурные свойства твердых растворов GaInAsSbBi, выращенных на подложках GaSb
Author(s) -
А.С. Пащенко,
О.В. Девицкий,
Л.С. Лунин,
М.Л. Лунина,
О.С. Пащенко
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.10.52552.19164
Subject(s) - crystallite , misorientation , amorphous solid , transmission electron microscopy , materials science , layer (electronics) , reflection (computer programming) , substrate (aquarium) , diffraction , scattering , thin film , electron diffraction , solid solution , crystallography , morphology (biology) , optics , microstructure , nanotechnology , chemistry , composite material , grain boundary , metallurgy , physics , oceanography , geology , computer science , programming language , biology , genetics
GaInAsSbBi solid solutions with different Bi contents are synthesized on n-GaSb substrates with a misorientation of 6° between the (100) and (111)A planes. Structural properties and morphology of GaInAsSbBi thin films are studied. Transmission electron microscopy and X-ray diffraction have shown that the films have a polycrystalline structure. It is found that an increase in the Bi concentration in the solid solution leads to a decrease in the average size of the region of coherent scattering by (111) reflection from 20 to 5 nm. It is shown that in films with a lower content of Bi, the thickness of the transition amorphous layer at the “layer-substrate” heterointerface decreases.