Open AccessВлияние водорода на электрические и фотоэлектрические свойства тонкопленочных структур InP/Pd, полученных золь-гель методом
Author(s) -
Е.А. Гребенщикова,
В.А. Шутаев,
В.А. Матвеев,
Н.Н. Губанова,
О.А. Шилова,
Ю.П. Яковлев
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.10.52549.19144
Subject(s) - photocurrent , schottky diode , materials science , photoelectric effect , optoelectronics , hydrogen , diode , semiconductor , substrate (aquarium) , hydrogen sensor , thin film , photoconductivity , nanotechnology , palladium , chemistry , catalysis , biochemistry , oceanography , organic chemistry , geology
The current-voltage characteristics and photoelectric properties of semiconductor structures containing Pd nanoparticles in thin films synthesized by the sol-gel method on an n-InP substrate have been investigated. The experimental results show that in presence of hydrogen the cut-off voltage changes. The photovoltage and photocurrent upon illumination of the structure with an LED (λ = 0.9 μm) and pulsed exposure to hydrogen change, that was observed earlier for hydrogen-sensitive Pd/n-InP Schottky diodes. The prospects of using the structures under study as a sensitive element for hydrogen sensor are discussed.