Функционализация поверхности low-k диэлектриков ионами Ar низкой энергии
Author(s) -
A. A. Solovykh,
A. A. Sycheva,
Е. Н. Воронина
Publication year - 2022
Publication title -
письма в журнал технической физики
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.07.52286.19085
Subject(s) - density functional theory , ab initio , ion , atom (system on chip) , work (physics) , materials science , atomic physics , irradiation , low energy , molecular physics , chemistry , computational chemistry , thermodynamics , physics , computer science , nuclear physics , organic chemistry , embedded system
In this work low-energy Ar impacts on low-k surfaces were simulated with ab initio density functional theory method. The obtained results reveal the mechanism of CH3 group removal under Ar atom/ion irradiation; the threshold energy of this process was estimated.
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