Open AccessВлияние морфологии буферного слоя AlN на структурное качество полуполярного слоя GaN, выращенного на подложке Si(001), по данным просвечивающей электронной микроскопии
Author(s) -
Д. А. Кириленко,
А.В. Мясоедов,
A. E. Kalmykov,
L. M. Sorokin
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.05.52159.18932
Subject(s) - materials science , buffer (optical fiber) , nitride , gallium nitride , layer (electronics) , transmission electron microscopy , optoelectronics , indium gallium nitride , crystallography , nanotechnology , chemistry , computer science , telecommunications
Structural features of the interface between semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si(001) template misoriented by an angle of 7° were studied by high-resolution transmission electron microscopy. The effect of interface morphology on the structural quality of the gallium nitride layer is revealed: faceted structure the surface of the buffer layer reduces the threading dislocations density.