Open AccessВлияние предварительной ионной бомбардировки на формирование нанопленок Co и CoSi-=SUB=-2-=/SUB=- на поверхности Si при твердофазном осаждении
Author(s) -
И.Х. Турапов,
И.Р. Бекпулатов,
А.К. Ташатов,
Б.Е. Умирзаков
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.05.52152.19043
Subject(s) - materials science , layer (electronics) , band gap , metal , ion , optoelectronics , nanotechnology , chemistry , organic chemistry , metallurgy
In work to obtain ordered nanophases of Co and CoSi2, nuclei are preliminarily created on the Si surface by bombardment with Ar+ ions with E0 = 0.5 keV and D = 8 × 1013 cm-2. It was found that a narrow band gap (Еg = 0.3 eV) appears in the band structure at a Co layer thickness of less than 3 ML. The metallic properties of the Co film are manifested at a thickness of more than 4-5 ML. Heating the Co/Si(111) system at T = 900 K leads to the formation of nanophases and CoSi2 nanofilms. Еg of CoSi2 nanophases with Ɵ 3 ML is ~0.8 eV, and of CoSi2 films - 0.6 eV.