Open AccessПамяти Е.М. Круглова и Филимонова В.В. Квантовый выход кремниевого лавинного фотодиода в диапазонах длин волн 114-170 и 210-1100 nm
Author(s) -
П.Н. Аруев,
В.П. Белик,
А.А. Блохин,
В.В. Забродский,
А.В. Николаев,
В.И. Сахаров,
И.Т. Серенков,
В.В. Филимонов,
Е.В. Шерстнев
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.05.52146.19026
Subject(s) - avalanche photodiode , photodiode , optoelectronics , range (aeronautics) , quantum efficiency , materials science , silicon , electron , optics , photon energy , photon , physics , detector , nuclear physics , composite material
Avalanche silicon photodiode have been developted for near ir, visible, UV and VUV light range. External quantum efficiency have been studied in 114 - 170 abd 210 - 1100nm range.It is demonstrated that photodiode reach from 29 to 9300 electrons/photon on 160 nm with bias voltage of 190 and 303 v respectively.