Open AccessИзучение процесса газофазного осаждения Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- из триметилгаллия и кислорода в широком интервале температур
Author(s) -
В.В. Лундин,
С.Н. Родин,
А.В. Сахаров,
А.Ф. Цацульников,
А.В. Лобанова,
М.В. Богданов,
Р.А. Талалаев,
Haiding Sun,
Shibing Long
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.04.52085.19081
Subject(s) - trimethylgallium , metalorganic vapour phase epitaxy , deposition (geology) , decomposition , chemical vapor deposition , pyrolysis , atmospheric temperature range , nitrogen , materials science , analytical chemistry (journal) , range (aeronautics) , chemistry , nanotechnology , thermodynamics , physics , epitaxy , environmental chemistry , paleontology , organic chemistry , layer (electronics) , sediment , composite material , biology
Study of Ga2O3 deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga2O3 deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550-700 C, that is 150 C higher, then for GaN deposition in the same reactor.