Open AccessМеханизм роста монослоя на верхней грани Ga-каталитических нитевидных нанокристаллов GaAs и GaP
Author(s) -
Александр Александрович Корякин,
Юрий Анатольевич Еремеев,
Сергей Викторович Федина,
Vladimir V. Fedorov
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.04.52079.19011
Subject(s) - nanowire , monolayer , materials science , substrate (aquarium) , facet (psychology) , growth rate , chemical physics , evaporation , nanotechnology , catalysis , condensed matter physics , chemical engineering , optoelectronics , chemistry , thermodynamics , physics , geometry , biology , mathematics , psychology , social psychology , biochemistry , personality , big five personality traits , engineering , ecology
The growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires is investigated. Within the framework of a theoretical model, the maximal monolayer coverage due to the material in the catalyst droplet, the nanowire growth rate and the content of group V atoms in the droplet are found depending on the growth conditions. The estimates of the phosphorus re-evaporation coefficient from neighboring nanowires and substrate are obtained by comparing the theoretical and experimental growth rate of Ga-catalyzed GaP nanowires.