Open AccessАсимптотическая стадия роста автокаталитических III-V нитевидных нанокристаллов методом молекулярно-пучковой эпитаксии
Author(s) -
В.Г. Дубровский,
М.В. Рылькова,
А.С. Соколовский,
Ж.В. Соколова
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.03.51976.19049
Subject(s) - molecular beam epitaxy , nanowire , radius , substrate (aquarium) , materials science , flux (metallurgy) , chemical vapor deposition , deposition (geology) , nanotechnology , epitaxy , layer (electronics) , metallurgy , geology , paleontology , oceanography , computer security , sediment , computer science
A new analytic theory is developed for asymptotic stage of self-catalyzed growth of III-V nanowires (NWs) by molecular beam epitaxy (MBE), where NWs collect all group III atoms deposited from vapor. The shadowing NW length is derived which corresponds for the full shadowing of the substrate surface in MBE. The NW length and radius are derived depending on the effective deposition thickness and MBE growth parameters. It is shown that the NW length increases, and their length decreases with decreasing the array pitch and increasing the V/III flux ratio.