Open AccessАморфизация кремниевых нанонитей при облучении ионами аргона
Author(s) -
А.В. Кононина,
Ю.В. Балакшин,
К.А. Гончар,
И.В. Божьев,
А.А. Шемухин,
В.С. Черныш
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2022.02.51912.18989
Subject(s) - materials science , silicon , irradiation , fluence , raman spectroscopy , ion , thin film , porous silicon , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , optics , physics , nuclear physics , organic chemistry , chromatography
The irradiation of silicon nanowires with Ar+ ions with an energy of 250 keV and fluences from 1013 cm^-2 to 10^16 cm^-2 was carried out. The dependence of the destruction of the structure under the action of ion irradiation on the fluence is investigated by the Raman spectroscopy. It is shown that the amorphization of porous silicon occurs at higher dpa values than in thin silicon thin films.