Open AccessВлияние условий формирования пленок In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--SnO-=SUB=-2-=/SUB=- методом магнетронного распыления на время жизни носителей заряда в кремнии
Author(s) -
Д.А. Кудряшов,
A. S. Gudovskikh,
A. A. Maksimova,
А. І. Баранов,
A. V. Uvarov,
Ivan Morozov,
A. O. Monastyrenko
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.24.51796.18945
Subject(s) - sputter deposition , degradation (telecommunications) , cavity magnetron , tin , materials science , analytical chemistry (journal) , deposition (geology) , oxide , indium , sputtering , chemistry , thin film , optoelectronics , metallurgy , nanotechnology , electronic engineering , environmental chemistry , paleontology , sediment , engineering , biology
The critical influence of the indium-tin oxide films formation rate on the degradation degree of the a-Si:H/c-Si interface during magnetron sputtering is shown. It was found that when the distance between the magnetron and the sample is 10 cm, the lifetime decreases from 2 ms to 10 us, while when this distance is reduced to 7 cm, due to a two-times decrease in the deposition time, a decrease is observed from 1.5 ms to 450 us.