Open AccessПосвящается памяти В.Д. Александрова Влияние отжига в инертной атмосфере на электрические свойства кристаллических пленок пентацена
Author(s) -
Г.А. Юрасик,
А.А. Кулишов,
М.Е. Гиваргизов,
В.А. Постников
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.23.51783.18983
Subject(s) - pentacene , materials science , annealing (glass) , threshold voltage , surface roughness , field effect transistor , transistor , surface finish , inert gas , saturation (graph theory) , electric field , analytical chemistry (journal) , optoelectronics , atomic force microscopy , thin film transistor , voltage , nanotechnology , composite material , chemistry , electrical engineering , physics , mathematics , engineering , layer (electronics) , combinatorics , quantum mechanics , chromatography
The results of a study of the effect of annealing at 150 °C in an inert atmosphere (Ar + 5% H2) on the electrical properties of organic field-effect transistors based on pentacene are presented. Crystalline pentacene films with a thickness of 95 ± 5 nm were obtained using thermal vacuum deposition. The transfer and output characteristics of field-effect transistors before and after annealing for 15 hours are investigated. It was found that as a result of heat treatment, the hole mobility in the saturation regime increased by an average of 30%, and the threshold voltage decreased approximately two times. According to the data of atomic force microscopy, annealing led to a more than twofold decrease in the surface roughness of pentacene films, as well as to a noticeable enlargement of grains, which led to a decrease in the concentration of traps for hole electric transport in the channel of the field-effect transistor.