Open AccessОсобенности излучательных свойств квантово-размерных частиц узкозонных полупроводников
Author(s) -
Н.Д. Жуков,
С.А. Сергеев,
А.А. Хазанов,
И.Т. Ягудин
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.22.51725.18927
Subject(s) - photoluminescence , photoconductivity , materials science , condensed matter physics , band gap , radiation , semiconductor , terahertz radiation , microstructure , wavelength , quantum dot , optoelectronics , quantum well , planar , molecular physics , optics , physics , laser , composite material , computer graphics (images) , computer science
For colloidal quantum-size particles (QP) of narrow-gap semiconductors, in contrast to quantum dots of wide-gap CdSe, in QP-PbS there take place an anomalous temperature dependence of the photoluminescence intensity. Also, in the planar microstructure containing QP-InSb, long-wavelength radiation (more than 3 µm) and photoconductivity (over 20 µm) was observed. Under certain conditions, the radiation intensity and photoconductivity demonstrate a resonance maximum. The effects were explained in the model of a one-dimensional quantum oscillator, which energy substantially depends on the effective mass of its quasi-free electron. This leads to competition between the manifestations of long-wave radiation and photoluminescence, and hence, to the anomalous temperature dependence of photoluminescence. It is assumed that QP-InSb in a planar microstructure can be sources and receivers of terahertz radiation, which properties depend on the crystal structure of quantum-sized particles determined by the parameters of their synthesis.