Open AccessУвеличение эффективности трехпереходных солнечных элементов за счет метаморфного InGaAs-субэлемента
Author(s) -
M. A. Mintairov,
V. V. Evstropov,
S. A. Mintairov,
M. V. Nakhimovich,
R. A. Salii,
М. Z. Shvarts,
Н.А. Калюжный
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.18.51475.18888
Subject(s) - x ray absorption spectroscopy , heterojunction , indium , materials science , optoelectronics , solar cell , germanium , triple junction , gallium arsenide , indium phosphide , silicon , optics , absorption spectroscopy , physics
The efficiency of GaInP/GaAs/InxGa1-xAs triple-junction solar cells obtained by replacing (in the widely used "classical" GaInP / GaAs / Ge heterostructure) the lower germanium with InxGa1-xAs subcell formed using the metamorphic growth technology has been investigated. Based on an original approach, the optimal indium concentration in the narrow-gap subcell has been found. The main parameters of InxGa1-xAs subcells with an indium concentration from x = 0.11 to 0.36 were determined and were used to calculate the IV characteristics of GaInP/GaAs/InxGa1-xAs solar cells. It has been determined that at x=0.28 the efficiency of the triple-junction solar cell increases by 3.4% (abs) in comparison with the “classical” solar cell, reaching a value of 40.3% (AM1.5D). Also it has been shown that the efficiency of such solar cells can be increased up to 41%.