Open AccessИсследование ионной имплантации азота через слой нитрида кремния для межприборной изоляции силовых GaN/Si-транзисторов
Author(s) -
В.И. Егоркин,
С.В. Оболенский,
В.Е. Земляков,
А.А. Зайцев,
В.И. Гармаш
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.18.51465.18805
Subject(s) - heterojunction , materials science , optoelectronics , passivation , layer (electronics) , nitride , ion implantation , fabrication , doping , high electron mobility transistor , silicon nitride , silicon , semiconductor , ion , nanotechnology , voltage , electrical engineering , chemistry , transistor , medicine , alternative medicine , organic chemistry , engineering , pathology
This letter reports a nitrogen ion implantation through silicon nitride passivation layer deposited on AlGaN/GaN on Si heterojunction structure. Employment of Si3N4 layer simplify HEMT fabrication process and helps to obtain high resistivity isolation due to the shift of implanted ions distribution towards the surface of semiconductor. This isolation process in combination with C-doped heterostructure buffer layer results in increased up to 650 V breakdown voltage.