Open AccessИсследование свойств солнечных элементов на основе селективного контакта MoO-=SUB=-x-=/SUB=-/Si с помощью спектроскопии полной проводимости
Author(s) -
А. І. Баранов,
Д.А. Кудряшов,
A. V. Uvarov,
Ivan Morozov,
A. A. Maksimova,
Е.А. Вячеславова,
A. S. Gudovskikh
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.16.51324.18779
Subject(s) - materials science , conduction band , sputter deposition , layer (electronics) , deposition (geology) , characterization (materials science) , optoelectronics , analytical chemistry (journal) , sputtering , chemistry , thin film , electron , nanotechnology , paleontology , physics , chromatography , quantum mechanics , sediment , biology
The possibility of using admittance spectroscopy to characterization the quality of ITO/MoOx/n-Si structures is shown. It has been demonstrated that magnetron sputtering of ITO layer at room temperature leads to radiation defects formation in the near-surface region of Si near the MoOx/Si interface with a depth of 0.13 and 0.26 eV below the conduction band with a capture cross-sectional area of (1–5)∙10^-19 and (5–10)∙10^-19 cm^-2, respectively. An increase in the deposition temperature of the ITO layer to 130 °C allows to reduce the concentration below the sensitivity leading to a significant improvement of solar cells characteristic.