Open AccessВысокоточная характеризация сверхмногопериодных AlGaAs/GaAs-сверхрешеток с помощью рентгеновской рефлектометрии на синхротронном источнике
Author(s) -
Л.И. Горай,
E. V. Pirogov,
М. В. Свечников,
M. S. Sobolev,
Н.К. Поляков,
L. G. Gerchikov,
E. V. Nikitina,
A. S. Dashkov,
М. М. Борисов,
С.Н. Якунин,
А. Д. Буравлев
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.15.51225.18824
Subject(s) - superlattice , diffractometer , reflectometry , synchrotron radiation , molecular beam epitaxy , synchrotron , materials science , photoluminescence , reflection (computer programming) , bragg's law , optics , epitaxy , diffraction , optoelectronics , physics , nanotechnology , scanning electron microscope , layer (electronics) , time domain , computer science , computer vision , programming language
The morphology of Al0.3Ga0.7As / GaAs superlattices grown by molecular beam epitaxy was determined by X-ray reflectometry (including a synchrotron radiation source) and photoluminescence. The thicknesses of the superlattice layers with 100 periods, found using laboratory and synchrotron studies, correlate with an accuracy of ~ 1%. At the synchrotron, beginning with high (> 4−5) Bragg orders, reflection peaks were found that are not observed in measurements with a diffractometer and are apparently associated with the technological features of the growth of such structures. It follows from the analysis that the peaks correspond to modulation in the superlattice with a period 3–5 times greater and characterize the scatter of the thicknesses over the structure depth by several percent.