Open AccessОсобенности оптического усиления в сильнолегированных Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N:Si-структурах
Author(s) -
П. А. Бохан,
К.С. Журавлёв,
Dimitrij E. Zakrevskĭi,
Т. В. Малин,
I. V. Osinnykh,
N. V. Fateev
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.14.51186.18782
Subject(s) - recombination , luminescence , atomic physics , excitation , spontaneous emission , electron , materials science , acceptor , wavelength , radiative transfer , physics , optoelectronics , chemistry , optics , laser , condensed matter physics , biochemistry , quantum mechanics , gene
Time-resolved luminescence and stimulated emission intensities has been experimentally investigated in heavily doped Al0.65Ga0.35N and Al0.74Ga0.26N structures under pulsed optical excitation. These results showed that the time decay of the luminescence and stimulated emission intensities for various wavelengths of the emitted spectrum and optical pumping intensities consisting of at least the fast and the slow components. Fast components with exponential time decay are responsible for the radiative recombination of nonequilibrium electrons on deep acceptors, while slow ones are responsible for the recombination of donor-acceptor pairs