Open AccessЗолото-индуцированная кристаллизация тонких пленок аморфного субоксида кремния
Author(s) -
Н.А. Лунев,
А.О. Замчий,
Е.А. Баранов,
И.Е. Меркулова,
В.О. Константинов,
И.В. Корольков,
Е.А. Максимовский,
В.А. Володин
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.14.51185.18793
Subject(s) - suboxide , crystallization , materials science , silicon , annealing (glass) , polycrystalline silicon , amorphous solid , substrate (aquarium) , crystallite , layer (electronics) , thin film , amorphous silicon , chemical engineering , crystallography , nanotechnology , crystalline silicon , metallurgy , chemistry , thin film transistor , oceanography , geology , engineering
For the first time, polycrystalline silicon (poly-Si) was obtained as a result of the gold-induced crystallization of amorphous silicon suboxide (a-SiOx). It is shown that, during annealing of a sample with a “substrate/gold thin film/a-SiO0.2 thin film” structure at 335 ℃, poly-Si is formed in a bottom layer (on the substrate), while gold diffuses into the upper layer. With an increase in the temperature to 370 ℃, the mechanism of poly-Si formation remains unchanged, however, only the rate of the crystallization process increases. Apparently, the process of poly-Si formation proceeds through the formation of gold silicides, which almost completely decompose into crystalline phases of gold and silicon at 370 ℃ for 10 h.