Open AccessЧисленное моделирование вольт-амперной характеристики биполярного мемристора на основе оксида гафния
Author(s) -
А.Н. Алёшин,
Н.В. Зенченко,
О.А. Рубан
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.13.51121.18415
Subject(s) - memristor , tin , basis (linear algebra) , hafnium , current (fluid) , finite element method , voltage , materials science , mechanics , electronic engineering , physics , condensed matter physics , mathematics , electrical engineering , engineering , thermodynamics , metallurgy , geometry , zirconium
A finite element model has been developed that allows calculating the current-voltage characteristic of a bipolar memristor based on hafnium oxide Pt/HfO2/TiN, which reflects both the high-resistance and low-resistance states of the memristor. The mathematical basis of the model was Maxwell's equations for the stationary case. The model allows us to evaluate the relationship between the properties of materials included in the structure of the memristor and its operating current.