Open AccessЭнергопотребление при высокочастотной модуляции неохлаждаемого InGaAs/GaAs/AlGaAs-микродискового лазера
Author(s) -
A. E. Zhukov,
E. I. Moiseev,
А.М. Надточий,
А.C. Драгунова,
Н.В. Крыжановская,
M. M. Kulagina,
S. A. Mintairov,
Н.А. Калюжный,
F. I. Zubov,
М. В. Максимов
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.13.51118.18707
Subject(s) - optoelectronics , materials science , gallium arsenide , modulation (music) , power consumption , laser , quantum dot , signal (programming language) , quantum well , power (physics) , indium gallium arsenide , optics , physics , computer science , quantum mechanics , acoustics , programming language
The energy consumption of a microdisk laser with InGaAs/GaAs quantum well-dots operating uncooled under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal.