Open AccessМаксимальные параметры резистивного состояния и влияние уровня напряжения на деградацию сверхпроводящих свойств в стабилизированных высокотемпературных сверхпроводящих проводах второго поколения
Author(s) -
В.А. Мальгинов
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.13.51113.18744
Subject(s) - resistive touchscreen , superconductivity , voltage , materials science , condensed matter physics , electrical resistance and conductance , electrical engineering , optoelectronics , physics , composite material , engineering
It is established that in HTSC-stabilized materials, the transition between the superconducting and resistive states has an electromagnetic character, and the resistive state has universal characteristics in terms of voltage and resistance per unit length: 0.040 V/cm and 50 µΩ/cm. It is found that after the transition from the resistive to the normal state, when the voltage level in the normal state is more than 0.7 V, the irreversible destruction of the superconducting properties of the HTSС material occurs. The obtained characteristics allow us to determine the safe level of operation and evaluate the resistance and voltage level in the HTSС elements of electrical equipment using a stable resistive mode