Open AccessБарьер Шоттки на контакте магнитного 3d-металла с полупроводником
Author(s) -
С.Ю. Давыдов,
О.В. Посредник
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.11.51006.18650
Subject(s) - schottky barrier , condensed matter physics , semiconductor , materials science , charge (physics) , schottky diode , metal , optoelectronics , physics , metallurgy , quantum mechanics , diode
With the aim of the Friedel transition metal d-band model and semiconductor local defect state model the analytical expressions for metal – semiconductor charge transfer and Schottky barrier height are obtained. It is shown that the account of metal magnetization leads to the increase of the charge transfer and corresponding contribution to the Schottky barrier height. Numerical estimates are made for the contacts of Co and Ni with 6H- and 4H-SiC polytypes.