Open AccessФормирование наноразмерных ферромагнитных филаментов Ni в пленках ZrO-=SUB=-2-=/SUB=-(Y)
Author(s) -
Д. А. Антонов,
А.С. Новиков,
Д. О. Филатов,
А.В. Круглов,
Igor Nikolaevich Antonov,
А.В. Здоровейщев,
О.Н. Горшков
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.11.51004.18665
Subject(s) - ferromagnetism , materials science , conductive atomic force microscopy , magnetic force microscope , atomic force microscopy , electrode , nanometre , thin film , protein filament , resistive touchscreen , condensed matter physics , nanotechnology , magnetic field , magnetization , chemistry , composite material , physics , engineering , quantum mechanics , electrical engineering
In thin ZrO2 (Y) / Ni films, with used of an atomic force microscope (AFM) probe, conductive ferromagnetic filaments of nanometer sizes, consisting of Ni atoms, are formed. Memristor structures based on such films, the upper electrode of which was the AFM probe, demonstrated bipolar-type resistive switching (RP) associated with the destruction and reduction of Ni filaments. The area where the conducting filament emerges on the surface of the ZrO2 (Y) film manifested itself in the magnetic force image as a single-domain ferromagnetic particle.