Open AccessЗависимость скорости роста и структуры III-V нитевидных нанокристаллов от площади сбора адатомов на поверхности подложки
Author(s) -
В.Г. Дубровский
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.09.50906.18727
Subject(s) - nanowire , wurtzite crystal structure , radius , growth rate , materials science , substrate (aquarium) , phase (matter) , nanotechnology , condensed matter physics , crystallography , diffraction , optics , chemistry , geometry , physics , mathematics , oceanography , computer security , organic chemistry , geology , computer science
A theoretical analysis is presented for the growth rate and structure of III-V nanowires depending on the collection area of group III adatoms on the substrate surface. An expression for the maximum possible nanowire vertical growth rate is obtained and different reasons are analyzed for its suppression in different technologies. It is shown that the maximum growth rate is proportional to the collection area and inversely proportional to the squared nanowire radius. It is demonstrated that self-catalyzed GaAs nanowires grow or shrink radially at large or small adatom collection areas, respectively, having the zincblende crystal phase in both cases. The wurtzite phase forms in GaAs nanowires growing only axially at the intermediate adatom collection areas.