Open AccessДиэлектрические и пироэлектрические свойства композитов на основе нитридов алюминия и галлия, выращенных методом хлорид-гибридной эпитаксии на подложке карбида кремния на кремнии
Author(s) -
А. В. Солнышкин,
О.Н. Сергеева,
О.А. Шустова,
Sh. Sh. Sharofidinov,
М. В. Старицын,
Е.Ю. Каптелов,
С. А. Кукушкін,
И. П. Пронин
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.09.50898.18673
Subject(s) - pyroelectricity , epitaxy , materials science , heterojunction , nitride , microstructure , layer (electronics) , optoelectronics , dielectric , hydride , composite material , composite number , metallurgy , ferroelectricity , metal
The microstructure, dielectric, and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC / (111) Si substrates by chloride-hydride epitaxy are studied. In the process of layer growth, the phenomenon of spontaneous formation of heterojunctions was discovered. Based on AlxGa1-xN epitaxial layers, a material has been obtained which currently has one of the highest pyroelectric coefficients for crystals (or thin films) of aluminum nitride.