Open AccessНаправленное излучение из квантовых точек GaAs в теле нитевидных нанокристаллов AlGaAs
Author(s) -
R. R. Reznik,
К. М. Морозов,
I. L. Krestnikov,
К.П. Котляр,
I. P. Soshnikov,
Lorenzo Leandro,
N. Akopian,
Г. Э. Цырлин
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.08.50855.18715
Subject(s) - nanowire , molecular beam epitaxy , optoelectronics , quantum dot , perpendicular , radiation , intensity (physics) , silicon , materials science , gallium arsenide , radiant intensity , optics , epitaxy , physics , nanotechnology , geometry , mathematics , layer (electronics)
We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.