Open AccessГибридный фотоприемник среднего инфракрасного диапазона на основе полупроводниковых квантовых ям
Author(s) -
В.С. Кривобок,
А.Д. Кондорский,
Д.А. Пашкеев,
Е.А. Екимов,
А.Д. Шабрин,
Д.А. Литвинов,
Л.Н. Григорьева,
С.А. Колосов,
М.А. Чернопицский,
А.В. Клековкин,
П.А. Форш
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.08.50851.18656
Subject(s) - photodetector , infrared , photoconductivity , silicon carbide , materials science , electromagnetic field , optoelectronics , electric field , polarization (electrochemistry) , physics , optics , chemistry , quantum mechanics , metallurgy
A hybrid mid-infrared photodetector has been implemented, in which silicon carbide (SiC) particles are used to increase the interaction of the electromagnetic field with the electronic subsystem of quantum wells. On the basis of direct measurements of infrared photoconductivity and calculations within the framework of the finite difference method in the time domain, it is shown that this approach makes it possible to increase the sensitivity of such infrared photodetector to electromagnetic radiation by reversing the direction of polarization of the electric field, including in the near zone of SiC particles.