Open AccessВлияние окисления пористого кремния на формирование нанокомпозитов пористый кремний/индий электрохимическим методом
Author(s) -
Н.Л. Гревцов,
Е.Б. Чубенко,
В.П. Бондаренко,
И.М. Гаврилин,
А.А. Дронов,
С.А. Гаврилов
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.07.50801.18599
Subject(s) - indium , nitric acid , porous silicon , deposition (geology) , electrochemistry , aqueous solution , porosity , silicon , materials science , chemistry , inorganic chemistry , chemical engineering , metallurgy , electrode , composite material , organic chemistry , geology , paleontology , sediment , engineering
It is concluded that oxidation of porous silicon in an air atmosphere at 300 ° C or in an aqueous solution of nitric acid (50 vol.%) can drastically improve the filling of pores by indium during its subsequent electrochemical deposition. Due to the oxidation of the porous skeleton’s topmost areas, the maximum concentration of indium is shifted from the surface deeper into the pore channels. This effect is especially apparent in the case of oxidation via nitric acid, whereat the maximum relative concentration of indium inside the pores is achieved.