Open AccessПрименение метода матрицы рассеяния для расчета примесных состояний в полупроводниковых структурах
Author(s) -
С.В. Морозов,
М.С. Жолудев
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.07.50795.18663
Subject(s) - wave function , hamiltonian (control theory) , coulomb , physics , impurity , symmetry (geometry) , quantum mechanics , circular symmetry , condensed matter physics , mathematics , electron , geometry , mathematical optimization
We adapted S-matrix method for calculation of energy levels and carrier wavefunctions near impurity/defect states. We demonstrate the possibility of implying this method for multiband models on the example of Luttinger Hamiltonian with Coulomb acceptor in the spherical symmetry approximation. The obtained energies of discrete levels are in well agreement with results of calculations performed by other methods.