Open AccessПодложки с алмазным теплоотводом для эпитаксиального роста GaN
Author(s) -
И.О. Майборода,
И.А. Черных,
В.С. Седов,
А.С. Алтахов,
А.А. Андреев,
Ю.В. Грищенко,
Е.М. Колобкова,
А.К. Мартьянов,
В.И. Конов,
М.Л. Занавескин
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.07.50792.18630
Subject(s) - diamond , materials science , wafer , optoelectronics , silicon , heterojunction , thermal conductivity , heat sink , silicon nitride , polycrystalline silicon , crystallite , molecular beam epitaxy , epitaxy , nanotechnology , composite material , metallurgy , layer (electronics) , electrical engineering , engineering , thin film transistor
Silicon wafers with a polycrystalline diamond heat sink were fabricated; silicon and diamond layers were 300 nm and 250 µm thick, respectively. The thermal conductivity of the diamond was 1290 ± 190 W / m • K. Nitride heterostructures with a two-dimensional electron gas on silicon substrates with a polycrystalline diamond heat sink were grown by ammonia molecular beam epitaxy. Carrier mobility in two-dimensional electron gas and sheet resistance were 1400 cm2 /V•s of 300 Ω/□, respectively.