Open AccessИмпульсные характеристики кремниевых фотоэлектрических преобразователей, облученных низкоэнергетическими протонами
Author(s) -
Н.М. Богатов,
Л.Р. Григорьян,
А.И. Коваленко,
М.С. Коваленко,
Л.С. Лунин
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.07.50791.18596
Subject(s) - irradiation , photodiode , materials science , amplitude , radiation , silicon , modulation (music) , optoelectronics , atomic physics , voltage , amplitude modulation , pulse amplitude modulation , pulse (music) , frequency modulation , optics , physics , radio frequency , electrical engineering , detector , nuclear physics , acoustics , quantum mechanics , engineering
The effect of irradiation with low-energy protons on the pulse characteristics of silicon photovoltaic structures is investigated. For measurements, bipolar rectangular voltage pulses with a constant amplitude of 10 mV and a frequency of 200 kHz and 1 MHz were used. It is shown that irradiation with protons with an energy of 180 keV and a dose of 10^15 cm^-2 creates a region with a high concentration of radiation defects in the SCR of the n^+ -p transition. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.