Open AccessМоделирование реакции низкобарьерного диода Мотта на воздействие тяжелых заряженных частиц космического пространства
Author(s) -
А.С. Пузанов,
В.В. Бибикова,
И.Ю. Забавичев,
Е.С. Оболенская,
Е.А. Тарасова,
Н.В. Востоков,
С.В. Оболенский
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.06.50761.18607
Subject(s) - atomic physics , femtosecond , diode , radiation , laser , ionization , photon , ion , band gap , materials science , ionizing radiation , physics , optoelectronics , irradiation , optics , nuclear physics , quantum mechanics
A theoretical analysis of transient ionization processes occurring in a low-barrier GaAs Mott diode under the influence of space radiation high energy charged particles and simulating pulsed laser radiation is carried out. The diode response to the As+ ion action with an energy of 200 MeV, corresponding to a linear energy transfer of 26 MeV cm2/mg, is compared with the response to the femtosecond pulses optical radiation action of various durations (10-1000 fs) and photon energies exceeding the GaAs band gap.