Open AccessЭлектронно-пучковая кристаллизация тонких пленок аморфного субоксида кремния
Author(s) -
Е.А. Баранов,
В.О. Константинов,
В.Г. Щукин,
А.О. Замчий,
И.Е. Меркулова,
Н.А. Лунёв,
В.А. Володин
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.06.50754.18560
Subject(s) - suboxide , materials science , silicon , annealing (glass) , irradiation , amorphous solid , cathode ray , amorphous silicon , polycrystalline silicon , electron beam processing , raman spectroscopy , analytical chemistry (journal) , electron , composite material , optoelectronics , optics , crystallography , chemistry , crystalline silicon , physics , thin film transistor , layer (electronics) , quantum mechanics , chromatography , nuclear physics
Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of an electron beam irradiation of amorphous hydrogenated silicon suboxide films with a stoichiometric coefficient of 0.5 (a-SiO0.5:H) and a thickness of 580 nm. The accelerating voltage of the electron beam was 2000 V, and the beam current was 100 mA. Raman spectra of silicon films after annealing are obtained depending on the time of electron beam irradiation of the initial material. It is shown that as a result of annealing, poly-Si is formed, the stress in which varied from compression to tension depending on the time of exposure.