Open AccessРоль кулоновского взаимодействия в дефектной модели барьера Шоттки
Author(s) -
С.Ю. Давыдов,
О.В. Посредник
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.05.50673.18594
Subject(s) - schottky barrier , semiconductor , electron , condensed matter physics , coulomb , materials science , schottky diode , range (aeronautics) , atomic physics , schottky effect , metal , molecular physics , chemistry , physics , optoelectronics , quantum mechanics , metallurgy , diode , composite material
Schottky barrier model is proposed which is characterized by the interface di-mers consist of semiconductor defects and nearest neighboring metal atoms. Short-range Coulomb repulsion between defects and metal atoms electrons is taken into account. Analytical expressions for the occupation for the atoms and defects occupation numbers and Schottky barrier height are obtained.