Open AccessВлияние имплантации ионов As-=SUP=-+-=/SUP=- и последующего отжига на электрические свойства приповерхностных слоев варизонных пленок n-Hg-=SUB=-0.78-=/SUB=-Cd-=SUB=-0.22-=/SUB=-Te
Author(s) -
А. В. Войцеховский,
S. N. Nesmelov,
Станислав Михайлович Дзядух,
В. С. Варавин,
С. А. Дворецкий,
N. N. Mikhaĭlov,
G.I. Sidorov,
М.В. Якушев,
D. V. Marin
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.04.50643.18605
Subject(s) - photodiode , annealing (glass) , molecular beam epitaxy , materials science , optoelectronics , semiconductor , semiconductor materials , epitaxy , analytical chemistry (journal) , chemistry , nanotechnology , layer (electronics) , metallurgy , chromatography
Films of n-Hg0.775Cd0.225Te with near-surface wide-gap layers were grown by molecular beam epitaxy on Si (013) substrates. To measure the admittance, metal – insulator – semiconductor (MIS) structures were fabricated on the basis of the as-grown HgCdTe film, films after implantation, and films after implantation and annealing. Using techniques that take into account the presence of graded-gap layers and slow interface states, the main parameters of the near-surface layers of HgCdTe films have been determined after the technological procedures used to create photodiodes.