Open AccessAlSb/InAs-гетероструктуры для СВЧ-транзисторов
Author(s) -
M. A. Sukhanov,
А. К. Бакаров,
К.С. Журавлёв
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.03.50574.18588
Subject(s) - heterojunction , transistor , materials science , optoelectronics , power consumption , ultra high frequency , nanotechnology , power (physics) , electrical engineering , engineering , voltage , physics , quantum mechanics
The paper describes the features of the MBE growth process of AlSb / InAs heterostructures with a high-mobility two-dimensional electron gas for UHF transistors with ultra-low power consumption. The main stages of manufacturing transistors based on AlSb / InAs heterostructures are outlined. The drain and transfer characteristics of transistors are presented and discussed.