Open AccessПлазмохимическое и жидкостное травление в постростовой технологии каскадных солнечных элементов на основе гетероструктуры GaInP/GaInAs/Ge
Author(s) -
А.В. Малевская,
Ю.М. Задиранов,
D. A. Malevskii,
P. V. Pokrovskii,
Н.Д. Ильинская,
V. M. Andreev
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.03.50568.18446
Subject(s) - heterojunction , etching (microfabrication) , photoresist , materials science , optoelectronics , isotropic etching , leakage (economics) , layer (electronics) , nanotechnology , economics , macroeconomics
Investigation and development of a separating mesa-structure creating technology for fabricating multi-junction solar cells based on the GaInP/GaInAs/Ge heterostructure has been carried out. Studied were methods of etching of heterostructure layers: liquid chemical etching in the etchants based on HBr, H2O2, K2Cr2O7 and plasma-chemical etching in the stream of operating gas BCl3. The comparative analysis of etching methods was studied. The protective masks based on photoresist layer and TiOx/SiO2 were developed. Multi-junction solar cells with low parameters of leakage current less than 10-7 A at voltage 0,5-1 V were created.