Open AccessФотовольтаические характеристики светодиодов с двумя последовательными p-n-переходами
Author(s) -
А.А. Соколовский,
В.В. Моисеев
Publication year - 2021
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2021.01.50459.18516
Subject(s) - optoelectronics , materials science , photovoltaic system , light emitting diode , converters , radiation , wavelength , voltage , power (physics) , optics , electrical engineering , physics , engineering , quantum mechanics
In this work, we investigated the photovoltaic characteristics of high-power IR LEDs manufactured by OSRAM GmbH based on structures with two vertically stacked p-n junctions. The spectral range of operation of PVTs based on LEDs with different radiation wavelengths was determined, and it was shown that the efficiency of photovoltaic conversion in them reaches more than 30% at a wavelength of 808 nm. The high (up to 2.6 V) output voltage of such converters allows them to be used for direct power supply of low-power electronic devices with optical radiation.