Open AccessВлияние давления при эпитаксии на свойства слоев GaN
Author(s) -
А. В. Сахаров,
В. В. Лундин,
Е. Е. Заварин,
S. O. Usov,
P. N. Brunkov,
A. F. Tsatsul’nikov
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.24.50418.18517
Subject(s) - metalorganic vapour phase epitaxy , impurity , materials science , epitaxy , photoluminescence , sapphire , optoelectronics , atmospheric pressure , spectral line , enhanced data rates for gsm evolution , crystal (programming language) , condensed matter physics , optics , chemistry , nanotechnology , laser , layer (electronics) , geology , physics , telecommunications , organic chemistry , astronomy , computer science , oceanography , programming language
Growth of GaN layers by MOVPE on sapphire substrates at various pressures, including above atmospheric, was studied. It is shown that epitaxy at higher pressures does not change the crystal perfection of the layers, the electron mobility, and the impurities incorporation, but leads to the formation of a surface with a smaller lateral scale of inhomogeneities. The epitaxy pressure also affects the ratio of the intensity of the band-edge and impurity-related lines in the photoluminescence spectra and the leakage currents in the reverse-biased Schottky barrier.