Open AccessВлияние кривизны поверхности на процессы физического распыления кремния ионами Ar низкой энергии
Author(s) -
А.А. Сычева
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/pjtf.2020.23.50345.18423
Subject(s) - silicon , ion , molecular dynamics , irradiation , curvature , materials science , atomic physics , nanotechnology , chemical physics , molecular physics , optoelectronics , chemistry , computational chemistry , physics , nuclear physics , organic chemistry , geometry , mathematics
In this paper molecular dynamics simulations of the irradiation of silicon nanoparticles with 200 eV Ar ions were performed. The detailed analysis of the results obtained demonstrates special features of the interaction between incident low-energy Ar ions and silicon targets with different surface curvature.