Open AccessВлияние параметров короткопериодной сверхрешетки InGaAs/InGaAlAs на эффективность фотолюминесценции
Author(s) -
С.С. Рочас,
И.И. Новиков,
А.Г. Гладышев,
Е.С. Колодезный,
А.В. Бабичев,
В.В. Андрюшкин,
В.Н. Неведомский,
Д.В. Денисов,
Л.Я. Карачинский,
А.Ю. Егоров,
В.Е. Бугров
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.22.50304.18421
Subject(s) - photoluminescence , superlattice , heterojunction , materials science , lasing threshold , optoelectronics , epitaxy , substrate (aquarium) , molecular beam epitaxy , diffraction , laser , quantum well , layer (electronics) , wavelength , optics , nanotechnology , oceanography , physics , geology
The results of the study of heterostructures based on short-period InGaAs/InGaAlAs superlattices fabricated by molecular beam epitaxy on an InP substrate with the aim of using them as active regions for vertical-cavity surface emitting lasers of the 1.3 μm spectral range are studied. Photoluminescence and X-ray diffraction studies of the fabricated heterostructures are carried out. It was shown that a change in the ratio of the quantum well thickness and the barrier layer thickness of the superlattice allows one to controllably shift the position of the photoluminescence peak and to provide the heterostructure parameters necessary to achieve lasing at a wavelength of 1.3 μm, while the photoluminescence efficiency remains practically unchanged.