Open AccessИсследование квантовых точек в мультизеренном слое планарно-торцевой микроструктуры
Author(s) -
Н.Д. Жуков,
И.Т. Ягудин,
Н.П. Абаньшин,
Д.С. Мосияш
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.21.50196.18392
Subject(s) - quantum dot , materials science , planar , semiconductor , microstructure , condensed matter physics , enhanced data rates for gsm evolution , optoelectronics , band gap , coulomb , physics , electron , composite material , telecommunications , computer graphics (images) , quantum mechanics , computer science
Quantum dots (QDs) of Cds, PbS, and InSb semiconductors in a multi-grain layer of planar-edge microstructure were studied. A model of the ordered arrangement of CT in the micro-gap structure and the flow of current along the lines of parallel arrangement of QD is proposed. Electronic transport at low voltage values (less than 8 V) is determined by thermal and tunnel emission from the QD into the gap, at high values - by the charge restriction in the QD according to the Coulomb block model. A strong influence of IR and UV radiation on the VAC was found.