Open AccessВлияние условий формирования геттера в высокоомном кремнии на характеристики PIN-фотодиодов
Author(s) -
И.Б. Чистохин,
К.Б. Фрицлер
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.21.50188.18455
Subject(s) - getter , materials science , optoelectronics , silicon , doping , fabrication , substrate (aquarium) , dark current , photodiode , electrical resistivity and conductivity , phosphorus , deposition (geology) , reverse bias , secondary ion mass spectroscopy , analytical chemistry (journal) , metallurgy , chemistry , electrical engineering , photodetector , diode , medicine , paleontology , oceanography , alternative medicine , engineering , pathology , chromatography , sediment , biology , geology
The influence of gettering conditions in high resistivity silicon during the PIN photodiode fabrication process on the reverse dark currents has been studied. It was demonstrated that the getter formation of backside substrate by a combination of phosphorus ion implantation and deposition of polysilicon film followed by phosphorus doping at the temperatures below 900 0C results in reduction of reverse dark current value and increasing of nonequilibrium carrier lifetime.