Open AccessНизкотемпературный рост кубической фазы CdS методом атомно-слоевого осаждения на гибридных подложках SiC/Si
Author(s) -
С. А. Кукушкін,
А. В. Осипов,
A. I. Romanychev,
Igor Kasatkin,
A. S. Loshachenko
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.21.50186.18466
Subject(s) - epitaxy , materials science , cadmium sulfide , silicon , phase (matter) , hexagonal phase , silicon carbide , layer (electronics) , analytical chemistry (journal) , deposition (geology) , metastability , ellipsometry , crystallography , thin film , optoelectronics , nanotechnology , hexagonal crystal system , chemistry , metallurgy , paleontology , organic chemistry , chromatography , sediment , biology
A new method has been developed for the epitaxial growth of cadmium sulfide CdS films in a metastable cubic phase on silicon substrates with a buffer layer of epitaxial silicon carbide by atomic layer deposition. This CdS phase is achieved due to the low growth temperature (~ 180 ℃). The cubic phase was identified by both X-ray diffraction (XRD) and spectral ellipsometry due to the fact that the main peak of CdS absorption is split into two peaks in the hexagonal phase (4.9 eV and 5.4 eV) and is a singlet in the cubic phase (5.1 eV).