Open AccessИзопериодические гетероструктуры Ga-=SUB=-x-=/SUB=-In-=SUB=-1-x-=/SUB=-Sb-=SUB=-y-=/SUB=-As-=SUB=-z-=/SUB=-P-=SUB=-1-y-z-=/SUB=-/InP для планарных p-n-фотодиодов
Author(s) -
М. Л. Лунина,
Л. С. Лунин,
Д. Л. Алфимова,
А. С. Пащенко,
О. С. Пащенко
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.19.50044.18379
Subject(s) - photodiode , analytical chemistry (journal) , sensitivity (control systems) , materials science , heterojunction , wavelength , optics , optoelectronics , physics , chemistry , chromatography , electronic engineering , engineering
Isoperiodic heterostructures GaxIn1-xSbyAszP1-y-z/InP at a 1.06 to 1.6 μm wavelength interval were grown by the method of floating-zone recrystallization with temperature gradient. Absolute spectral sensitivity of ~ 0.59 A/W and a speed of ~ 10 ns were achieved. Threshold sensitivity for the fabricated photodiodes was in the range 2·10^-10 to 5·10^-11 W with a signal-to-noise ratio of 10.