Open AccessИсследование методов пассивации и защиты каскадных солнечных элементов
Author(s) -
А.В. Малевская,
Д.А. Малевский,
П.В. Покровский,
В.М. Андреев
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.19.50043.18375
Subject(s) - materials science , optoelectronics , electroluminescence , heterojunction , silicon nitride , nitride , silicon , layer (electronics) , composite material
Carried out were investigations of methods for passivating and protecting p-n junctions in points of their exit on the side mesa structure surface and for sealing hermetically multijunction solar cells based on the GaInP/GaAs/Ge heterostructure. Study of protecting coatings based on silicon nitride layers and on silicone by analyzing dark I-V characteristics of solar cells and by estimating the electroluminescence distribution has been performed.