Open AccessИсследование влияния легирования на переходные слои анизотипных гетероструктур на основе GaInAsP и InP, полученных методом МОС-гидридной эпитаксии
Author(s) -
Г.С. Гагис,
В.И. Васильев,
Р.В. Лeвин,
А.Е. Маричев,
Б.В. Пушный,
В.И. Кучинский,
Д.Ю. Казанцев,
Б.Я. Бер
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.19.50039.18419
Subject(s) - heterojunction , arsenic , layer (electronics) , substrate (aquarium) , arsine , hydride , epitaxy , materials science , doping , optoelectronics , chemistry , analytical chemistry (journal) , nanotechnology , metal , metallurgy , catalysis , geology , chromatography , biochemistry , oceanography , phosphine
In the study of doped anisotypic heterostructures with layers of Ga(1-x)In(x)P(1-y)As(y) grown on InP substrates with a buffer layer of InP by MOC-hydride epitaxy, the presence of transition regions was detected in the Ga(1-x)In(x)P(1-y)As(y) layer on the substrate side for individual samples, across which the arsenic content (y) increased from the interface with the InP layer to the surface of the structure by the amount of (Δy) up to 0.15, and the content of elements of the third group (x) remained constant.