Open AccessОдноэлектронный транспорт в коллоидных квантовых точках узкозонных полупроводников
Author(s) -
Н.Д. Жуков,
М.В. Гавриков,
Д.В. Крыльский
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.17.49895.18355
Subject(s) - coulomb blockade , quantum dot , coulomb , condensed matter physics , physics , quantum tunnelling , electron , planar , photon , semiconductor , terahertz radiation , voltage , chemistry , optoelectronics , optics , quantum mechanics , computer graphics (images) , transistor , computer science
Single-electron transport in the planar structure of colloidal quantum dots of InSb, PbS, CdSe semiconductors was studied using a scanning tunneling microscope. On the current – voltage characteristics, sections of the current dip were observed similar to the Coulomb gap. Qualitative and numerical comparative estimates suggest that one-electron transport and a phenomenon similar to the Coulomb blockade are observed in the structure of the set of quantum dots. When measuring the current-voltage characteristics, the white-light illumination of the sample breaks the Coulomb blockade, and it can be expected that an instrument element based on such a structure will respond to individual photons. In the region of the Coulomb gap, current oscillations with frequencies in the terahertz range are possible.