Open AccessЛимитирующие режимы роста III-V нитевидных нанокристаллов
Author(s) -
В.Г. Дубровский,
А.С. Соколовский,
H. Hijazi
Publication year - 2020
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2020.17.49889.18384
Subject(s) - nanowire , nucleation , radius , diffusion , materials science , group (periodic table) , vapor–liquid–solid method , growth rate , deposition (geology) , chemical vapor deposition , solid surface , chemical physics , nanotechnology , chemical engineering , thermodynamics , chemistry , physics , mathematics , geometry , organic chemistry , paleontology , computer security , sediment , biology , computer science , engineering
Theoretical analysis is presented for vapor-liquid-solid growth of III-V nanowires in the presence of three competing processes of the group V deposition, surface diffusion of group III adatoms and nucleation of islands at the liquid-solid interface. A generalized equation for the nanowire growth rate is obtained which can be limited of one of the three processes depending on the growth environment. Different regimes of vapor-liquid-solid growth of III-V nanowires are analyzed depending on the group III and V influxes and nanowire radius.